c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w sp10d150 sp10d150 sp10d150 sp10d150 rev.a may .201 1 silicon silicon silicon silicon controlled controlled controlled controlled rectifiers rectifiers rectifiers rectifiers features ? 10a(2 5a),150v ? v f(max) =0.72v(@t j =125 ) ? low power loss,high efficiency ? common cathode structure ? guard ring for over voltage protection, high reliability ? maximum junction temperature range(175 ) general description dual center tap schottky rectifiers suited for high frequency switch power supply and free wheeling diodes, polarity protection applications. absolute maximum ratings symbol parameter value units v drm repetitive peak reverse voltage 150 v v dc maximum dc blocking voltage 150 v i f (rms) rms forward current 10 a i f(av) average forward current per diode 5 a per device 10 i fsm surge non repetitive for ward current 150 a i rrm repetitive peak reverse current 1 a dv/dt critical rate of rise pf reverse voltage 10000 v/ns t j junction temperature 175 c t stg storage temperature -40~150 c thermal characteristics symbol parameter value units min typ max r qjc thermal resistance junction to case - - 2.2 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w sp10d150 sp10d150 sp10d150 sp10d150 2 / 4 electrical characteristics ( ( ( ( per per per per diode diode diode diode ) ) ) ) characteristics symbol test conditions min typ max units reverse leakage current i r v r =v rrm tj=25 - - 10 a tj=125 - - 4.5 m a forward voltage drop v f if=5a tj=25 - 0.81 0.9 v tj=125 - 0.67 0.72 if=10a tj=25 - 0.89 0.95 tj=125 - 0.76 0.8 *notes:tp =380 s, <2%
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w sp10d150 sp10d150 sp10d150 sp10d150 3 / 4 fig. fig. fig. fig. 3 3 3 3 average average average average current current current current versus versus versus versus ambient ambient ambient ambient temperature temperature temperature temperature (d=0.5)(per (d=0.5)(per (d=0.5)(per (d=0.5)(per diode) diode) diode) diode) fig. fig. fig. fig. 4 4 4 4 reverse reverse reverse reverse leakage leakage leakage leakage current current current current versus versus versus versus reverse reverse reverse reverse voltage voltage voltage voltage applied applied applied applied ( ( ( ( typical typical typical typical values,per values,per values,per values,per diode) diode) diode) diode) fig.1forward fig.1forward fig.1forward fig.1forward voltage voltage voltage voltage drop drop drop drop versus versus versus versus forward forward forward forward current(maximum current(maximum current(maximum current(maximum values values values values ,per ,per ,per ,per diode) diode) diode) diode) fig fig fig fig .2 .2 .2 .2 junction junction junction junction capacitance capacitance capacitance capacitance versus versus versus versus reverse reverse reverse reverse voltage voltage voltage voltage applied applied applied applied (typical (typical (typical (typical values,per values,per values,per values,per diode) diode) diode) diode)
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w sp10d150 sp10d150 sp10d150 sp10d150 4 / 4 to to to to -220 -220 -220 -220 package package package package dimension dimension dimension dimension unit: mm
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